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| v00.0504 MICROWAVE CORPORATION HMC469MS8G Features +18 dBm P1dB Output Power 15 dB Gain Output IP3: +34 dBm Supply (Vs): +5V to +12V 14.9 mm2 Ultra Small 8 Lead MSOP SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT Typical Applications The HMC469MS8G is a dual RF/IF gain block & LO or PA driver: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment General Description Functional Diagram The HMC469MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifier covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90 hybrids to create a high linearity driver amplifier. Each amplifier in the HMC469MS8G offers 15 dB of gain, +18dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The combined dual amplifier circuit delivers up to +20 dBm P1dB with +35dBm OIP3 for specific application bands through 4 GHz. Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25 C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz DC - 3.0 GHz 3.0 - 5.0 GHz Min. 12.5 11 10 9 7.5 Typ. 15 13 12 11 9.5 0.008 12 10 8 14 10 8 6 18 18 16 14 12.5 11 34 30 25 23 4.0 5.0 75 Max. Units dB dB dB dB dB dB/ C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss 0.012 Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) 15 13 11 9.5 8 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 306 v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 GAIN (dB) 0 -5 -10 -15 -20 -25 1 2 3 4 5 6 7 8 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 20 18 16 14 12 10 8 6 4 2 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C 8 AMPLIFIERS - SMT 8 - 307 Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C -5 -5 -10 -10 -15 -15 -20 0 1 2 3 4 5 6 FREQUENCY (GHz) -20 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) +25C +85C -40C Noise Figure vs. Temperature 10 9 +25C +85C -40C -5 8 NOISE FIGURE (dB) 3 4 5 6 7 6 5 4 3 2 1 -10 -15 -20 -25 1 2 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 FREQUENCY (GHz) Data shown is of a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature 22 20 18 16 P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C 14 Output IP3 vs. Temperature 40 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 75 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 6 7 8 9 Vs (Vdc) 35 OIP3 (dBm) 30 25 +25C +85C -40C 20 15 0 1 2 3 4 5 6 FREQUENCY (GHz) Gain P1dB Psat OIP3 10 11 12 Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms 82 80 78 Icc (mA) 76 74 72 70 68 66 3.8 -40C +25C +85C Cross Channel Isolation 0 -5 PATH ISOLATION (dB) -10 -15 -20 -25 -30 -35 -40 -45 INPUT1-OUTPUT2 INPUT2-OUTPUT1 3.9 4 4.1 4.2 Vcc (Vdc) 4.3 4.4 4.5 4.6 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Data shown is of a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 308 v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Gain* 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 0.5 Input & Output Return Loss * 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) INPUT RETURN LOSS OUTPUT RETURN LOSS 8 AMPLIFIERS - SMT 8 - 309 GAIN (dB) +25C +85C -40C Reverse Isolation* 0 -5 REVERSE ISOLATION (dB) -10 -15 -20 -25 -30 -35 -40 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Output IP3* 40 35 OIP3 (dBm) 30 +25C +85C -40C 25 20 1.4 1.6 1.8 2 2.2 2.4 2.6 FREQUENCY (GHz) Output P1dB* 22 20 18 16 14 12 10 1.4 +25C +85C -40C Output Psat* 22 20 18 16 14 12 10 1.4 +25C +85C -40C P1dB (dBm) 1.6 1.8 2 2.2 2.4 2.6 Psat (dBm) 1.6 1.8 2 2.2 2.4 2.6 FREQUENCY (GHz) FREQUENCY (GHz) * Measurements shown are of both channels with 1.5 - 2.5 GHz 90 splitter/combiners on input & output (see application circuit for balanced operation). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFin)(Vcc = +4.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 29.58 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc 100 mA +17 dBm 150 C 1.92 W 33.8 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 310 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Pin Descriptions Pin Number Function Description Interface Schematic 8 AMPLIFIERS - SMT 8 - 311 1 RFIN1 This pin is DC coupled. An off chip DC blocking capacitor is required. 8 RFOUT1 RF output and DC Bias (Vcc1) for the output stage. 2, 3, 6, 7 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 4 RFIN2 This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT2 RF output and DC Bias (Vcc2) for the output stage. Ground Paddle GND Ground paddle must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT Application Circuit for Balanced Operation Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 13 1/8 W 6V 27 1/4 W 8V 51 1/2 W 10V 82 1/2 W 12V 110 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1, L2 C4, C5, C9, C10 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 8 - 312 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 109164* Item J1 - J4 J5 - J8 L1, L2 C1, C8 C2, C7 C3, C6 C4, C5, C9, C10 R1, R2 U1 PCB** Description PC Mount SMA Connector DC Pins Inductor, 0402 Pkg. 2.2 F Capacitor, Tantalum 1000 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. Capacitor, 0402 Pkg. Resistor, 2010 Pkg. HMC469MS8G 109162 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 313 |
Price & Availability of HMC469MS8G
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